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參數(shù)資料
| 型號(hào)： | CEK01N6 |
| 英文描述： | 600V N Channel MOS |
| 中文描述： | 600V的?頻道馬鞍山 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | CEK01N6 |
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
DRAIN-SOURCE AVALANCHE RATING
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
a
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V,I
D
= 250
μ
A
600
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600V, V
GS
= 0V
25
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
=
30V, V
DS
= 0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2
4
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
= 0.125A
7.5
ns
ns
ns
nC
2
E
AS
I
AS
V
DD
=50V, L=60mH
R
G
=9.1
A
mJ
0.25
100
5.5
0.7
S
Forward Transconductance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
FS
g
V
DS
=50V, I
D
= 0.125A
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
=300V,
I
D
= 1A,
V
GS
= 10V
R
GEN
=25
6
18
25
50
10
20
30
50
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=480V, I
D
= 1A,
V
GS
=10V
8
12
ns
nC
nC
Fall Time
3
1.3
CEK01N6
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