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參數(shù)資料
| 型號： | CEK01N6 |
| 英文描述： | 600V N Channel MOS |
| 中文描述： | 600V的?頻道馬鞍山 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 51K |
| 代理商： | CEK01N6 |
600
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
600V , 0.25A , R
DS(ON)
=7.5
Super high dense cell design for low R
DS(ON)
.
High power and current handling capability.
TO-92 Package.
@V
GS
=10V.
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
30
V
Drain Current-Continuous
-Pulsed
I
D
0.25
1
0.25
1.5
A
A
A
W
I
DM
Drain-Source Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
R
JA
85
/W
C
CEK01N6
TO-92
GDS
S
G
D
1
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