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參數(shù)資料
| 型號(hào)： | CEG6946A |
| 英文描述： | 20V N Channel MOS |
| 中文描述： | 20V的?頻道馬鞍山 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 53K |
| 代理商： | CEG6946A |
CEG6946A
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
=250
μ
A
20
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=20V, V
GS
=0V
1
Gate-Body Leakage
ON CHARACTERISTICS
b
I
GSS
V
GS
=
12V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250
μ
A
0.5
1.5
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=4.5V, I
D
=3.0A
45
m
V
GS
=2.5V, I
D
=2.4A
75
m
On-State Drain Current
I
D(ON)
g
V
DS
=5V, V
GS
=4.5V
3.7
A
5
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=10V, I
D
=3.0A
C
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
511
P
F
216
P
F
P
F
73
SWITCHING CHARACTERISTICS
Turn-On Delay Time
C
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
Fall time
V
DD
= 10V,
I
D
=1A,
V
GEN
= 4.5V,
R
GEN =
6
20
50
ns
ns
ns
ns
12
30
50
100
25
10
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=10V, I
D
=3A,
V
GS
=4.5V
11
15
nC
nC
nC
3.6
2.8
C
9-13
58
35
9
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