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參數(shù)資料
| 型號(hào)： | CEG3456 |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | CEG3456 |
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
=250
μ
A
30
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=30V, V
GS
=0V
1
Gate-Body Leakage
ON CHARACTERISTICS
b
I
GSS
V
GS
=
20V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=250
μ
A
1
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
=4.8A
38
m
V
GS
=4.5V, I
D
=3.8A
52
m
On-State Drain Current
I
D(ON)
g
V
DS
5V, V
GS
=10V
15
A
6
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=10V, I
D
=4.8A
C
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
400
P
F
180
P
F
P
F
55
SWITCHING CHARACTERISTICS
Turn-On Delay Time
C
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
Fall time
V
DD
= 15V,
I
D
=1A,
V
GEN
= 10V,
R
GEN =
6
23
45
ns
ns
ns
ns
14
35
45
90
30
10
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=15V, I
D
=4.8A,
V
GS
=10V
12
17
nC
nC
nC
2
3
C
2
40
30
CEG3456A
9
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