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ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250
μ
A
30
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=30V, V
GS
=0V
1
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
= 20V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=18A
7.5
8.5
m
m
V
GS
=5.0V, I
D
=15A
9.5
11
On-State Drain Current
I
D(ON)
g
V
GS
= 10V, V
DS
= 5V
70
32
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=5V, I
D
=12A
b
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
2447
P
F
983
P
F
P
F
187
SWITCHING CHARACTERISTICS
Turn-On Delay Time
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 15V,
I
D
=40A,
V
GS
= 10V,
R
GEN
=6
25
50
ns
ns
ns
ns
21
45
58
100
13
33
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=10V, I
D
= 40A,
V
GS
=5V
35
45
nC
nC
nC
11
16
Fall Time
6
6-73
CED72A3/CEU72A3
相關PDF資料 |
PDF描述 |
|---|---|
| CEU72A3 | 30V N Channel MOS |
| CEG3456A | 30V N Channel MOS |
| CEG3456 | 30V N Channel MOS |
| CEG6946A | 20V N Channel MOS |
| CEK01N6 | 600V N Channel MOS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CED730G | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CED73A3 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CED73A3G | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CED75A3 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CED75A3_08 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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