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參數(shù)資料
| 型號： | CED62A3 |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 56K |
| 代理商： | CED62A3 |
Parameter
Symbol
Condition
Min
Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is = 2.3A
1.3
V
a
Notes
a.Pulse Test:Pulse Width 300
s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
C
I
D
,
I
D
,
6-149
CED62A3/CEU62A3
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
O
R
D
,
R
D
,
0
1
2
3
4
25 C
Tj=125 C
-55 C
20
30
40
50
60
10
60
50
40
30
20
10
0
0
1
2
3
4
5
V
GS
=3V
V
GS
=10,8,6,4V
1800
1500
1200
900
600
300
0
5
10
15
20
25
30
Ciss
Coss
Crss
0
-100
-50
0
50
100
200
2.2
1.9
1.6
1.3
1.0
0.7
0.4
V
GS
=10V
I
D
=14A
150
6
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