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參數(shù)資料
| 型號： | CED62A3 |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 56K |
| 代理商： | CED62A3 |
CED62A3/CEU62A3
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250
μ
A
30
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=30V, V
GS
=0V
1
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
= 20V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=14A
9.5
11.5
m
m
V
GS
=4.5V, I
D
=11A
13
16
On-State Drain Current
I
D(ON)
g
V
GS
= 10V, V
DS
= 5V
55
26
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=5V, I
D
=12A
b
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
1100
P
F
600
P
F
P
F
180
SWITCHING CHARACTERISTICS
Turn-On Delay Time
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 15V,
I
D
=14A,
V
GS
= 10V,
R
GEN
=6
19
48
ns
ns
ns
ns
36
72
97
175
68
135
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=10V, I
D
= 14A,
V
GS
=10V
35
42
nC
nC
nC
6
11
Fall Time
6
6-148
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CEU62A3 | 30V N Channel MOS |
| CED703AL | 30V N Channel MOS |
| CEU703AL | 30V N Channel MOS |
| CED71A3 | 30V N Channel MOS |
| CEU71A3 | 30V N Channel MOS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CED62M125 | 制造商:Siemens 功能描述: |
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| CED6336 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CED6355 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| CED63A3 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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