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參數(shù)資料
| 型號： | CED6031L |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 38K |
| 代理商： | CED6031L |
CED6030L/CEU6030L
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
=250
μ
A
30
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=24V, V
GS
=0V
1
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
=
20V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=10V, I
D
=20A
1
1.6
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=4.5V, I
D
=18A
15.5
22
m
m
On-State Drain Current
I
D(ON)
g
V
DS
=10V, V
GS
=10V
60
32
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=10V, I
D
=26A
b
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
1315
525
110
10
190
55
130
19
5
9
P
F
P
F
P
F
SWITCHING CHARACTERISTICS
Turn-On Delay Time
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
Fall time
V
DD
=15V,
I
D
= 40A,
V
GEN
= 10V,
R
GEN =
24
16
ns
ns
ns
ns
250
90
200
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
= 24V, I
D
= 40A,
V
GS
=5V
23
nC
nC
nC
6-28
6
12
18.5
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|---|---|
| CED603AL | 30V N Channel MOS |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CED603AL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:30V N Channel MOS |
| CED6056 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CED6060N | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CED6060R | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| CED6186 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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