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參數(shù)資料
| 型號(hào)： | CED603AL |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | CED603AL |
30
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor
March 1998
FEATURES
30V , 40A , R
DS(ON)
=15.5m
R
DS(ON)
=22m
@V
GS
=10V.
@V
GS
=4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-251 & TO-252 package.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
V
Drain Current-Continuous
@T
J
=125 C
-Pulsed
I
D
40
A
I
DM
120
A
Drain-Source Diode Forward Current
I
S
40
A
Maximum Power Dissipation
P
D
W
W/ C
Operating and Storage Temperature Range
T
J
, T
STG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
3
50
/W
C
/W
C
CED6030L/CEU6030L
@Tc=25 C
Derate above 25 C
50
0.3
S
G
D
CEU SERIES
TO-252AA(D-PAK)
CED SERIES
TO-251(l-PAK)
G
G
S
S
D
D
6
6-27
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| CED6186 | 制造商:CET 制造商全稱(chēng):Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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