參數(shù)資料
型號: CED01N6
英文描述: 600V N Channel MOS
中文描述: 600V的?頻道馬鞍山
文件頁數(shù): 4/5頁
文件大?。?/td> 44K
代理商: CED01N6
4
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
V
G
g
F
,
B
D
,
D
I
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 7. Transconductance Variation
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
C
1.30
1.20
1.10
1.0
0.90
0.80
0.70
0.60
-50
-25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250
A
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
O
R
D
,
R
D
,
-100
-50
0
50
100
200
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
=10V
I
D
=0.65A
150
0.75
1
0
0.25
0.5
0
0.25
0.5
0.75
1.0
V
DS
=50V
Ciss
Coss
Crss
300
250
200
150
100
50
0
0
5
10
15
20
25
2
0.1
1
0.4
0.6
0.8
1.2
1.0
V
GS
=0V
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250
A
CED01N6/CEU01N6
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