- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384190 > CEBF630B 200V N Channel MOS PDF資料下載
參數(shù)資料
| 型號(hào)： | CEBF630B |
| 英文描述： | 200V N Channel MOS |
| 中文描述： | 200伏?頻道馬鞍山 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 42K |
| 代理商： | CEBF630B |
4-41
4
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULSE WIDTH
INVERTED
T
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
r
V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
V
G
,
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
I
D
,
10
8
6
4
2
0
0
6
12
18
24
V
DS
=160V
I
D
=9A
CEPF630B/CEBF630B
10
10
0
10
10
3
2
1
10
-1
10
0
10
1
T
C
=25 C
Tj=150 C
Single Pulse
100
s
R
DS
(ON im
DC
1m
10m
10
-5
10
-4
10
-3
10
-2
10
-1
P
DM
t
1
t
2
1. R
JC
(t)=r (t) * R
JC
2. R
JC
=See Datasheet
3. T
JM-
T
C
= P* R
JC
(t)
4. Duty Cycle, D=t1/t2
10
-3
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CER0021A | Analog Filter |
| CER0059A | Analog Filter |
| CES2301 | -20V P Channel MOS |
| CES2302 | 20V N Channel MOS |
| CES2303 | -30V P Channel MOS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CEBF634 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEBF640 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEBFM1E221M6T36 | 制造商:MAR 功能描述:RL722X025 .2LS AMMO 500/PER 制造商:MARCON 功能描述:AMMO 10X12 MARCON S8L6C,S8L5A |
| CEBFM1E221M6-T36 | 制造商:MARCON 功能描述:AMMO 10X12 MARCON S8L6C,S8L5A |
| CEBFZ44 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。