參數(shù)資料
型號(hào)： CEB9926
英文描述： 20V N Channel MOS
中文描述： 20V的?頻道馬鞍山
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 41K
代理商： CEB9926
ELECTRICAL CHARACTERISTICS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250
μ
A
20
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=20V, V
GS
=0V
1
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
= 8V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
= 250
μ
A
0.5
0.73
1
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=4.5V, I
D
=6.0A
23
30
m
m
V
GS
=2.5V, I
D
=5.2A
28
40
On-State Drain Current
I
D(ON)
g
V
DS
= 5V, V
GS
= 4.5V
20
7
20
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=10V, I
D
=6.0A
b
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=8V, V
GS
= 0V
f =1.0MH
Z
1660
P
F
480
P
F
P
F
119
SWITCHING CHARACTERISTICS
Turn-On Delay Time
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 10V,
I
D
= 1A,
V
GEN
= 4.5V,
R
L
= 10
R
GEN
= 6
29
60
ns
ns
ns
ns
65
140
60
140
50
60
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=10V, I
D
= 6A,
V
GS
=4.5V
23
30
nC
nC
nC
4.5
8
C
Fall Time
4-138
CEP9926/CEB9926
4
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