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參數(shù)資料
| 型號： | CEB60N10 |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 97K |
| 代理商： | CEB60N10 |
CEP60N10/CEB60N10
4 - 116
C
I
D
,
Ciss
Coss
Crss
2400
2000
1600
1200
800
400
0
0
5
10
15
20
25
I
D
,
R
D
R
D
,
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
GS
=10V
I
D
=30A
-100
-50
0
50
100
150
200
V
T
,
G
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS
=V
GS
I
D
=250μA
-50
-25
0
25
50
75
100
125
150
I
S
,
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
0.4
0.6
0.8
1.0
10
1
10
0
10
2
1.4
1.2
V
GS
=0V
120
100
60
40
20
0
0
1
4
6
5
3
2
80
V
GS
=10,9V
V
GS
=5V
V
GS
=6V
V
GS
=7V
V
GS
=8V
80
60
40
20
0
0
2
4
6
100
8
T
J
=125 C
-55 C
25 C
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| CEP60N10 | N-Channel Enhancement Mode Field Effect Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CEB6186 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB61A2 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB61A3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:30V N Channel MOS |
| CEB62A2 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB62A3 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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