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參數(shù)資料
| 型號(hào)： | CEB60N10 |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | CEB60N10 |
CEP60N10/CEB60N10
Electrical Characteristics
Tc = 25 C unless otherwise noted
Parameter
Symbol
Min
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
b
Forwand Transconductance
Dynamic Characteristics
c
Input Capacitance
Output Capacitance
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BV
DSS
I
DSS
I
GSSF
I
GSSR
23.5
2
4
-100
100
1
m
V
nA
nA
μ
A
V
S
4 - 115
Reverse Transfer Capacitance
Switching Characteristics
c
Turn-On Delay Time
Turn-On Rise Time
Turn-On Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
Turn-Off Delay Time
Test Condition
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= 80V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Typ
Max
100
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 30A
V
DS
= 15V, I
D
= 30A
V
DD
= 50V, I
D
= 30A,
V
GS
= 10V, R
GEN
= 2.5
V
DS
= 80V, I
D
= 30A,
V
GS
= 10V
V
= 25V, V
GS
= 0V,
f = 1.0 MHz
V
GS
= 0V, I
S
= 60A
1620
670
240
19
17
40
13
65
19
23
28
34
80
26
84
60
1.3
26
pF
pF
pF
ns
ns
ns
nC
nC
ns
nC
A
V
19
4
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 700
μ
H, I
AS
= 46A, V
DD
= 25V, R
G
= 25
,
Starting T
J
= 25 C
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