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參數(shù)資料
| 型號： | CEB10N6 |
| 英文描述： | 600V N Channel MOS |
| 中文描述： | 600V的?頻道馬鞍山 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 42K |
| 代理商： | CEB10N6 |
4-60
4
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
V
G
g
F
,
B
D
,
D
I
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 7. Transconductance Variation
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
I
D
, Drain Current(A)
C
D
R
D
,
CEP10N4/CEB10N4
25 C
-55 C
3.0
2.5
2.0
1.5
1.0
0.5
00
5
15
20
25
10
V
GS
=5V
Tj=125 C
1.15
1.10
1.05
1.0
0.95
0.90
0.85
0.80
-50
-25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250
A
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250
A
15
12
18
0
3
6
9
0
5
10
15
20
V
DS
=10V
20
10
0.1
1
0.4
0.6
0.8
1.0
1.2
1.4
V
DS
=0V
Ciss
Coss
Crss
1800
1500
1200
900
600
300
0
0
5
10
15
20
25
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