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參數(shù)資料
| 型號(hào)： | CEB10N6 |
| 英文描述： | 600V N Channel MOS |
| 中文描述： | 600V的?頻道馬鞍山 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 42K |
| 代理商： | CEB10N6 |
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250
μ
A
450
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=450V, V
GS
=0V
25
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
= 30V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
= 250
μ
A
2
4
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=6A
600
700
m
On-State Drain Current
I
D(ON)
g
V
GS
= 10V, V
DS
= 10V
10
3
A
S
Forward Transconductance
SWITCHING CHARACTERISTICS
b
Turn-On Delay Time
FS
V
DS
=50V, I
D
=6A
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
=200V,
I
D
= 10A,
V
GS
=10V,
R
GEN
=9.1
14
ns
ns
ns
ns
27
50
24
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
= 320V, I
D
= 10A,
V
GS
= 10V
48
65
nC
nC
nC
4
15
Fall Time
4-58
4
DRAIN-SOURCE AVALANCHE RATING
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
a
E
AS
I
AS
450
10
A
mJ
500
100
6
60
100
125
75
7
25
V
DD
=50V, L=9.16mH
R
G
=25
CEP10N4/CEB10N4
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