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參數(shù)資料
| 型號： | CEB07N8 |
| 英文描述： | 800V N Channel MOS |
| 中文描述： | 800V的?頻道馬鞍山 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 45K |
| 代理商： | CEB07N8 |
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
4
DRAIN-SOURCE AVALANCHE RATING
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
a
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250
μ
A
800
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=800V, V
GS
=0V
50
Gate-Body Leakage
ON CHARACTERISTICS
a
I
GSS
V
GS
= 30V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
= 250
μ
A
2
4
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
= 6A
1.8
2.0
On-State Drain Current
I
D(ON)
g
V
GS
= 10V, V
DS
= 10V
5
A
S
Forward Transconductance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
FS
V
DS
=50V, I
D
=6A
b
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
=400V,
I
D
= 6A,
V
GS
= 10V
R
GEN
=25
32
45
ns
ns
ns
ns
68
95
194
230
70
98
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=640V, I
D
= 6A,
V
GS
=10V
70
85
nC
nC
nC
8
36
Fall Time
4-23
E
AS
I
AS
V
DD
50V,L=30.6mH
=
R
G
=25
A
mJ
CEP07N8/CEB07N8
7
500
7
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CEP07N8 | 800V N Channel MOS |
| CEB08N5 | 500V N Channel MOS |
| CEP08N5 | 500V N Channel MOS |
| CEB09N6 | 600V N Channel MOS |
| CEP09N6 | 600V N Channel MOS |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| CEB08N5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:500V N Channel MOS |
| CEB09N6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:600V N Channel MOS |
| CEB09N7A | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB09N7G | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB1012 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Transistor |
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