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參數(shù)資料
| 型號(hào)： | CEB06N5 |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)模式的邏輯電平場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | CEB06N5 |
4-20
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
V
G
g
F
,
B
D
,
D
I
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 7. Transconductance Variation
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
C
CEP06N5/CEB06N5
1.30
1.20
1.10
1.0
0.90
0.80
0.70
0.60
-50
-25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250
A
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250
A
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
O
R
D
,
R
D
,
-100
-50
0
50
100
200
2.2
1.9
1.6
1.3
1.0
0.7
0.4
V
GS
=10V
I
D
=4
150
Ciss
Coss
Crss
1200
1000
800
600
400
200
0
0
5
10
15
20
25
20
10
0.1
1
0.4
0.6
0.8
1.2
1.0
V
GS
=0V
3
4
0
1
2
0
1
2
3
4
V
DS
=50V
4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CEB07N65 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB07N7 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB07N8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:800V N Channel MOS |
| CEB08N5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:500V N Channel MOS |
| CEB09N6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:600V N Channel MOS |
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