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參數(shù)資料
| 型號(hào)： | CEB06N5 |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)模式的邏輯電平場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | CEB06N5 |
Parameter
Symbol
Condition
Min
Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =6A
1.5
V
a
Notes
a.Pulse Test:PulseWidth 300
s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
4-19
Figure 1. Output Characteristics
I
D
,
I
D
,
b
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
823
P
F
110
P
F
P
F
64
CEP06N5/CEB06N5
Figure 2. Transfer Characteristics
V
GS
, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
0
2
4
6
8
10
12
V
GS
=10,9,8,7V
V
GS
=5V
V
GS
=6V
0.1
1
2
4
6
10
8
25 C
150 C
-55 C
1.V
DS
=40V
2.Pulse Test
10
4
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| CEB07N65 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB07N7 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEB07N8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:800V N Channel MOS |
| CEB08N5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:500V N Channel MOS |
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