參數(shù)資料
型號： CDCE401YS
廠商： Texas Instruments, Inc.
英文描述： OSCILLATOR IC WITH ELECTRONIC CALIBRATION
中文描述： 振蕩器IC與電子校準
文件頁數(shù)： 11/19頁
文件大?。?/td> 246K
代理商： CDCE401YS
www.ti.com
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
TIMING REQUIREMENTS
over recommended ranges of supply voltage, load, and operating free-air temperature
CDCE401
SCAS820–JUNE 2006
VALUE
–0.5 to 8
UNIT
V
V
V
mA
mA
K/W
°C
VDD
V
I
V
O
Supply voltage range
Input voltage range
(2)
Output voltage range
(2)
Input current (V
I
< 0, V
I
> VDD)
Continuous output current
Package thermal impedance:
(3)
QFN8 package
Storage temperature range
–0.5 to VDD + 0.5
–0.5 to VDD + 0.5
±20
±50
TBD
–65 to 150
I
O
θ
JA
T
stg
(1)
Stresses beyond those listed under
absolute maximum ratings
may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under
recommended operating
conditions
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input and output negative voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
The package thermal impedance is calculated in accordance with JESD 51 (no-airflow condition) and JEDEC2S2P (high-k board).
(2)
(3)
MIN
NOM
MAX
UNIT
SUPPLY VOLTAGES, CURRENTS AND TEMPERATURE RANGE
Supply voltage: the four target supply-voltage ranges are:
a) 2.5 V ±10% = 2.25 V–2.75 V
VDD
b) 2.8 V ±10% = 2.52 V–3.08 V
c) 2.85 V ±10%= =2.56 V–3.14 V
d) 3 V ±10% = 2.7 V–3.30 V
VDD
Supply voltage during configuration of the device and EEPROM writing
I
DD
Supply current
2.25
3
3.3
V
3.1
3.2
3.3
20
V
f
= 100 MHz, V
DD-max
=
3.3 V, C
L-max
= 15 pF
f
IN
= 0 MHz, V
DD-max
mA
I
DD(DIS)
T
A
LVCMOS INPUT PARAMETER (SDATA, EN)
V
IH
High-level input voltage
V
IL
Low-level input voltage
R
PULLUP
Pullup resistor (EN and SDATA)
LVCMOS OUTPUT PARAMETER (FOUT)
V
OH
High-level output voltage
V
OL
Low-level output voltage
V
OH_12mA
High-level output voltage
V
OL_12mA
Low-level output voltage
I
OZH
/I
OZL
Output current in high-impedance state
Disable current
Operating free-air temperature
10
85
μ
A
°C
–40
VDD = 3.3 V
VDD = 3.3 V
VDD – 0.5
V
SS
– 0.3
VDD + 0.3
V
SS
+ 0.5
V
V
1.4
2
3.5
M
I
OH
= –6 mA
I
OL
= 6 mA
I
OH
= –12 mA
I
OL
= 12 mA
V
OUT
= VDD and V
OUT
= V
SS
VDD – 0.3
V
V
V
V
μ
A
V
SS
+ 0.3
VDD – 0.6
V
SS
+ 0.6
±10
PARAMETER
MIN
NOM
MAX
UNIT
XIN/XOUT REQUIREMENTS
f
CLK_IN
Crystal frequency
f
Range
Trimming range (range is dependent on connected crystal)
20
±20
100
MHz
ppm
OG0 = 1
OG0 = 1
OG0 = 0
OG0 = 0
OG1 = 1
OG1 = 0
OG1 = 1
OG1 = 0
33
30
27
25
Base input capacitance into XIN, measured
single-ended with all CXx turned off
C
BASE_XIN
pF
11
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