參數(shù)資料
型號: CD4043BMS
廠商: Intersil Corporation
英文描述: CMOS Quad 3 State R/S Latches(CMOS四 R/S鎖存器(三態(tài)))
中文描述: 3國的CMOS四路的R / S鎖存器的CMOS(四的R / S鎖存器(三態(tài)))
文件頁數(shù): 4/10頁
文件大?。?/td> 110K
代理商: CD4043BMS
7-879
Specifications CD4043BMS, CD4044BMS
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-
3
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
7
-
V
Propagation Delay
Set or Reset to Q
TPLH
TPHL
VDD = 10V
1, 2, 3
-
140
ns
VDD = 15V
1, 2, 3
-
100
ns
Propagation Delay
3 State Enable to Q
TPHZ
TPZH
VDD = 10V
1, 2, 4
-
110
ns
VDD = 15V
1, 2, 4
-
80
ns
Propagation Delay
3 State Enable to Q
TPLZ
TPZL
VDD = 10V
1, 2, 4
-
100
ns
VDD = 15V
1, 2, 4
-
70
ns
Transition Time
TTHL
TTLH
VDD = 10V
1, 2, 3
-
100
ns
VDD = 15V
1, 2, 3
-
80
ns
Minimum Set or Reset
Pulse Width
TW
VDD = 5V
1, 2, 3
-
160
ns
VDD = 10V
1, 2, 3
-
80
ns
VDD = 15V
1, 2, 3
-
40
ns
Input Capacitance
CIN
Any Input
1, 2
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. CL = 50pF, RL = 1K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
-
7.5
μ
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
μ
A
1, 4
-2.8
-0.2
V
N Threshold Voltage
Delta
VTN
VDD = 10V, ISS = -10
μ
A
1, 4
-
±
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
μ
A
1, 4
+25
o
C
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTP
VSS = 0V, IDD = 10
μ
A
1, 4
-
±
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
O
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
IDD
±
0.2
μ
A
Output Current (Sink)
IOL5
±
20% x Pre-Test Reading
Output Current (Source)
IOH5A
±
20% x Pre-Test Reading
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
相關(guān)PDF資料
PDF描述
CD4044BC Quad 3-STATE NAND R/S Latches(四3態(tài)輸入與非邏輯R/S緩沖器)
CD4044BPW Single 100Mbps Digital Isolator with Enable 8-SOIC -40 to 125
CD4044BDWR Single 100Mbps Digital Isolator 8-SOIC -40 to 125
CD4043BPW CMOS QUAD 3-STATE R/S LATCHES
CD4044 CMOS QUAD 3-STATE R/S LATCHES
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CD4043BNS 制造商:Rochester Electronics LLC 功能描述: 制造商:Texas Instruments 功能描述:
CD4043BNSR 功能描述:閉鎖 Tri-St. Quad NOR R/S RoHS:否 制造商:Micrel 電路數(shù)量:1 邏輯類型:CMOS 邏輯系列:TTL 極性:Non-Inverting 輸出線路數(shù)量:9 高電平輸出電流: 低電平輸出電流: 傳播延遲時(shí)間: 電源電壓-最大:12 V 電源電壓-最小:5 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-16 封裝:Reel
CD4043BNSRE4 功能描述:閉鎖 Tri-St. Quad NOR R/S RoHS:否 制造商:Micrel 電路數(shù)量:1 邏輯類型:CMOS 邏輯系列:TTL 極性:Non-Inverting 輸出線路數(shù)量:9 高電平輸出電流: 低電平輸出電流: 傳播延遲時(shí)間: 電源電壓-最大:12 V 電源電壓-最小:5 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-16 封裝:Reel
CD4043BNSRG4 功能描述:閉鎖 CMOS Quad NOR R/S RoHS:否 制造商:Micrel 電路數(shù)量:1 邏輯類型:CMOS 邏輯系列:TTL 極性:Non-Inverting 輸出線路數(shù)量:9 高電平輸出電流: 低電平輸出電流: 傳播延遲時(shí)間: 電源電壓-最大:12 V 電源電壓-最小:5 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-16 封裝:Reel
CD4043BPW 功能描述:閉鎖 CMOS Quad NOR R/S RoHS:否 制造商:Micrel 電路數(shù)量:1 邏輯類型:CMOS 邏輯系列:TTL 極性:Non-Inverting 輸出線路數(shù)量:9 高電平輸出電流: 低電平輸出電流: 傳播延遲時(shí)間: 電源電壓-最大:12 V 電源電壓-最小:5 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-16 封裝:Reel