參數(shù)資料
型號： CD4035BMS
廠商： Intersil Corporation
英文描述： CMOS 4 -Stage Parallel In/Parallel Out Shift Register(CMOS 4級并入并出移位寄存器)
中文描述： 的CMOS 4級并行輸入/并行輸出移位寄存器的CMOS（4級并入并出移位寄存器）
文件頁數(shù)： 4/10頁
文件大?。?/td> 117K
代理商： CD4035BMS
7-854
Specifications CD4035BMS
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
7
-
V
Propagation Delay
Clock to Q
TPHL1
TPLH1
VDD = 10V
1, 2, 3
-
200
ns
VDD = 15V
1, 2, 3
-
150
ns
Propagation Delay
Reset tO Q
TPHL2
TPLH2
VDD = 10V
1, 2, 3
-
200
ns
VDD = 15V
1, 2, 3
-
160
ns
Transition Time
TTHL
TTLH
VDD = 10V
1, 2, 3
-
100
ns
VDD = 15V
1, 2, 3
-
80
ns
Minimum Reset Pulse
Width
TW
VDD = 5V
1, 2, 3
-
250
ns
VDD = 10V
1, 2, 3
-
110
ns
VDD = 15V
1, 2, 3
-
40
ns
Maximum Clock Input
Frequency
FCL
VDD = 10V
1, 2, 3
6
-
MHz
VDD = 15V
1, 2, 3
8
-
MHz
Maximum Clock Rise and
Fall Time (Note 4)
TRCL
TFCL
VDD = 5V
1, 2, 3
-
15
μ
s
VDD = 10V
1, 2, 3
-
15
μ
s
VDD = 15V
1, 2, 3
-
15
μ
s
Minimum Data Setup
Time
J/K Lines
TS
VDD = 5V
1, 2, 3
-
220
ns
VDD = 10V
1, 2, 3
-
80
ns
VDD = 15V
1, 2, 3
-
60
ns
Minimum Data Setup
Time
Parallel-In Lines
TS
VDD = 5V
1, 2, 3
-
140
ns
VDD = 10V
1, 2, 3
-
50
ns
VDD = 15V
1, 2, 3
-
40
ns
Minimum Clock Pulse
Width
TW
VDD = 5V
1, 2, 3
-
200
ns
VDD = 10V
1, 2, 3
-
90
ns
VDD = 15V
1, 2, 3
-
60
ns
Input Capacitance
CIN
Any Input
1, 2
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. If more than one unit is cascaded, tRCL should be made less than or equal to the sum of the transition time and the fixed propagation
delay of the output of the driving stage for the estimated capacitive load.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
-
25
μ
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
μ
A
VDD = 10V, ISS = -10
μ
A
1, 4
-2.8
-0.2
V
N Threshold Voltage
Delta
VTN
1, 4
-
±
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
μ
A
VSS = 0V, IDD = 10
μ
A
1, 4
+25
o
C
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTP
1, 4
-
±
1
V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
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