參數(shù)資料
型號: CD4018
廠商: Intersil Corporation
英文描述: CMOS 4 Bit Arithmetic Logic Unit
中文描述: 的CMOS 4位算術(shù)邏輯單元
文件頁數(shù): 5/10頁
文件大小: 125K
代理商: CD4018
7-1404
Specifications CD40181BMS
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C
+25
o
C
-
3
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+7
-
V
Propagation Delay
A or B to F (Logic Mode)
A or B to G or P
TPHL1
TPLH1
VDD = 10V
1, 2, 3
-
320
ns
VDD = 15V
1, 2, 3
-
240
ns
Propagation Delay
A or B to F, Cn+4 or A = B
TPHL2
TPLH2
VDD = 10V
1, 2, 3
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-
400
ns
VDD = 15V
1, 2, 3
-
280
ns
Propagation Delay
Cn to F
TPHL3
TPLH3
VDD = 10V
1, 2, 3
-
270
ns
VDD = 15V
1, 2, 3
-
200
ns
Propagation Delay
Cn to Cn+4
TPHL4
TPLH4
VDD = 10V
1, 2, 3
-
200
ns
VDD = 15V
1, 2, 3
-
140
ns
Transition Time
TTHL
TTLH
VDD = 10V
1, 2, 3
-
100
ns
VDD = 15V
1, 2, 3
-
80
ns
Input Capacitance
CIN
Any Input
1, 2
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
-
25
μ
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
μ
A
1, 4
-2.8
-0.2
V
N Threshold Voltage
Delta
VTND
VDD = 10V, ISS = -10
μ
A
1, 4
-
±
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
μ
A
1, 4
+25
o
C
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTPD
VSS = 0V, IDD = 10
μ
A
1, 4
-
±
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
o
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-2
IDD
±
1.0
μ
A
Output Current (Sink)
IOL5
±
20% x Pre-Test Reading
Output Current (Source)
IOH5A
±
20% x Pre-Test Reading
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
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