參數(shù)資料
型號： CD4011BC
廠商： Fairchild Semiconductor Corporation
英文描述： Quad 2-Input NAND Buffered Gate(四2輸入于非門)
中文描述： 四2輸入與非緩沖門（四2輸入于非門）
文件頁數(shù)： 3/8頁
文件大?。?/td> 104K
代理商： CD4011BC
3
www.fairchildsemi.com
C
Absolute Maximum Ratings
(Note 1)
(Note 2)
Recommended Operating
Conditions
Note 1:
“Absolute Maximum Ratings” are those values beyond which the
safety of the device cannot be guaranteed. Except for “Operating Tempera-
ture Range” they are not meant to imply that the devices should be oper-
ated at these limits. The Electrical Characteristics tables provide conditions
for actual device operation.
Note 2:
All voltages measured with respect to V
SS
unless otherwise speci-
fied.
DC Electrical Characteristics
(Note 2)
Note 3:
I
OL
and I
OH
are tested one output at a time.
AC Electrical Characteristics
(Note 4)
CD4001BC: T
A
=
25
°
C, Input t
r
; t
f
=
20 ns. C
L
=
50 pF, R
L
=
200k. Typical temperature coefficient is 0.3%/
°
C.
Symbol
Parameter
t
PHL
Propagation Delay Time,
HIGH-to-LOW Level
Note 4:
AC Parameters are guaranteed by DC correlated testing.
Voltage at any Pin
Power Dissipation (P
D
)
Dual-In-Line
Small Outline
V
DD
Range
Storage Temperature (T
S
)
Lead Temperature (T
L
)
(Soldering, 10 seconds)
0.5V to V
DD
+
0.5V
700 mW
500 mW
0.5 V
DC
to
+
18 V
DC
65
°
C to
+
150
°
C
260
°
C
Operating Range (V
DD
)
Operating Temperature Range
CD4001BC, CD4011BC
3 V
DC
to 15 V
DC
40
°
C to
+
85
°
C
Symbol
Parameter
Conditions
40
°
C
+
25
°
C
Typ
0.004
0.005
+
85
°
C
Units
Min
Max
1
2
Min
Max
1
2
Min
Max
7.5
15
I
DD
Quiescent Device
Current
V
DD
=
5V, V
IN
=
V
DD
or V
SS
V
DD
=
10V, V
IN
=
V
DD
or V
SS
V
DD
=
15V, V
IN
=
V
DD
or V
SS
V
DD
=
5V
V
DD
=
10V
V
DD
=
15V
V
DD
=
5V
V
DD
=
10V
V
DD
=
15V
V
DD
=
5V, V
O
=
4.5V
V
DD
=
10V, V
O
=
9.0V
V
DD
=
15V, V
O
=
13.5V
V
DD
=
5V, V
O
=
0.5V
V
DD
=
10V, V
O
=
1.0V
V
DD
=
15V, V
O
=
1.5V
V
DD
=
5V, V
O
=
0.4V
V
DD
=
10V, V
O
=
0.5V
V
DD
=
15V, V
O
=
1.5V
V
DD
=
5V, V
O
=
4.6V
V
DD
=
10V, V
O
=
9.5V
V
DD
=
15V, V
O
=
13.5V
V
DD
=
15V, V
IN
=
0V
V
DD
=
15V, V
IN
=
15V
μ
A
μ
A
μ
A
V
V
4
0.006
0
0
4
30
0.05
0.05
V
OL
LOW Level
Output Voltage
0.05
0.05
0.05
0.05
|I
O
|
<
1
μ
A
0.05
0
5
10
0.05
0.05
V
V
V
V
OH
HIGH Level
Output Voltage
4.95
9.95
4.95
9.95
4.95
9.95
|I
O
|
<
1
μ
A
14.95
14.95
15
2
4
14.95
V
V
V
V
IL
LOW Level
Input Voltage
1.5
3.0
1.5
3.0
1.5
3.0
4.0
6
3
6
4.0
4.0
V
V
V
V
IH
HIGH Level
Input Voltage
3.5
7.0
3.5
7.0
3.5
7.0
11.0
0.52
1.3
11.0
0.44
1.1
9
11.0
0.36
0.9
V
I
OL
LOW Level Output
Current
0.88
2.25
mA
mA
(Note 3)
HIGH Level Output
Current
3.6
0.52
1.3
3.6
3.0
0.44
1.1
3.0
8.8
0.88
2.25
8.8
10
5
10
5
2.4
0.36
0.9
2.4
mA
mA
mA
I
OH
(Note 3)
Input Current
mA
μ
A
μ
A
I
IN
0.30
0.30
0.30
0.30
1.0
1.0
Conditions
Typ
120
50
35
Max
250
100
70
Units
ns
ns
ns
V
DD
=
5V
V
DD
=
10V
V
DD
=
15V
V
DD
=
5V
V
DD
=
10V
V
DD
=
15V
V
DD
=
5V
V
DD
=
10V
V
DD
=
15V
Any Input
Any Gate
t
PLH
Propagation Delay Time,
LOW-to-HIGH Level
110
50
35
250
100
70
ns
ns
ns
t
THL
, t
TLH
Transition Time
90
50
40
200
100
80
ns
ns
ns
C
IN
C
PD
Average Input Capacitance
Power Dissipation Capacity
5
14
7.5
pF
pF
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