參數(shù)資料
型號： CD40109BMS
廠商： Intersil Corporation
英文描述： CMOS Quad Low-to-High Voltage Level Shifter
中文描述： 的CMOS四路低到高電壓電平轉換器
文件頁數(shù)： 5/9頁
文件大?。?/td> 76K
代理商： CD40109BMS
7-40
Specifications CD40109BMS
Propagation Delay
3-State Shift Mode H-L
TPLZ2
VDD = 5V, VCC = 15V
1, 2, 4
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-
500
ns
VDD = 10V, VCC = 15V
1, 2, 4
-
260
ns
Propagation Delay
3-State Shift Mode L-H
TPZH1
VDD = 15V, VCC = 5V
1, 2, 4
-
460
ns
VDD = 15V, VCC = 10V
1, 2, 4
-
360
ns
Propagation Delay
3-State Shift Mode H-L
TPZH2
VDD = 5V, VCC = 15V
1, 2, 4
-
600
ns
VDD = 10V, VCC = 15V
1, 2, 4
-
260
ns
Propagation Delay
3-State Shift Mode L-H
TPZL1
VDD = 15V, VCC = 5V
1, 2, 4
-
160
ns
VDD = 15V, VCC = 10V
1, 2, 4
-
80
ns
Propagation Delay
3-State Shift Mode H-L
TPZL2
VDD = 5V, VCC = 15V
1, 2, 4
-
400
ns
VDD = 10V, VCC = 15V
1, 2, 4
-
80
ns
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. CL = 50pF, RL = 1K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
-
7.5
μ
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
μ
A
VDD = 10V, ISS = -10
μ
A
1, 4
-2.8
-0.2
V
N Threshold Voltage
Delta
VTN
1, 4
-
±
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
μ
A
VSS = 0V, IDD = 10
μ
A
1, 4
+25
o
C
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTP
1, 4
-
±
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
o
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
IDD
±
0.2
μ
A
Output Current (Sink)
IOL5
±
20% x Pre-Test Reading
Output Current (Source)
IOH5A
±
20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
Initial Test (Pre Burn-In)
MIL-STD-883
METHOD
100% 5004
GROUP A SUBGROUPS
1, 7, 9
READ AND RECORD
IDD, IOL5, IOH5A
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
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相關代理商/技術參數(shù)
參數(shù)描述
CD40109BNS 制造商:Texas Instruments 功能描述:
CD40109BNSR 功能描述:轉換 - 電壓電平 CMOS Quad Lo-to-Hi Vltg Level Shifter RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:MLF-8
CD40109BNSRE4 功能描述:轉換 - 電壓電平 CMOS Quad Lo-to-Hi Vltg Level Shifter RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:MLF-8
CD40109BNSRG4 功能描述:轉換 - 電壓電平 CMOS Quad Lo-to-Hi Vltg Level Shifter RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:MLF-8
CD40109BPW 功能描述:轉換 - 電壓電平 CMOS Quad Lo-to-Hi Vltg Level Shifter RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:MLF-8
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