參數(shù)資料
型號(hào)： CD4008BMS
廠商： Intersil Corporation
英文描述： CMOS 4-Bit Full Adder With Parallel Carry Out(CMOS 4位 并行輸出加法器)
中文描述： 的CMOS 4位全加器與平行開(kāi)展（的CMOS 4位并行輸出加法器）
文件頁(yè)數(shù)： 4/8頁(yè)
文件大小： 67K
代理商： CD4008BMS
7-678
Specifications CD4008BMS
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-55
o
C
+125
o
C
-55
o
C
-
-0.9
mA
-
-1.6
mA
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
-
-2.4
mA
-
-4.2
mA
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-
3
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+7
-
V
Propagation Delay Sum
In To Sum Out
TPHL1
TPLH1
VDD = 10V
1, 2, 3
-
320
ns
VDD = 15V
1, 2, 3
-
230
ns
Propagation Delay Carry
In To Sum Out
TPHL2
TPLH2
VDD = 10V
1, 2, 3
-
310
ns
VDD = 15V
1, 2, 3
-
230
ns
Propagation Delay Sum
In To Carry Out
TPLH3
TPHL3
VDD = 10V
1, 2, 3
-
180
ns
VDD = 15V
1, 2, 3
-
130
ns
Propagation Delay Carry
In To Carry Out
TPHL4
TPLH4
VDD = 10V
1, 2, 3
-
100
ns
VDD = 15V
1, 2, 3
-
80
ns
Transition Time
TTHL
TTLH
VDD = 10V
1, 2, 3
-
100
ns
VDD = 15V
1, 2, 3
-
80
ns
Input Capacitance
CIN
Any Input
1, 2
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
-
25
μ
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
μ
A
1, 4
-2.8
-0.2
V
N Threshold Voltage
Delta
VNTH
VDD = 10V, ISS = -10
μ
A
1, 4
-
±
1
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10
μ
A
1, 4
+25
o
C
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VPTH
VSS = 0V, IDD = 10
μ
A
1, 4
-
±
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
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