參數(shù)資料
型號: CAT93C4614PI-45TE13
元件分類: EEPROM
英文描述: 64K 8K x 8 Battery-Voltage CMOS E2PROM
中文描述: 64K的8K的× 8電池電壓的CMOS E2PROM的
文件頁數(shù): 8/10頁
文件大?。?/td> 168K
代理商: CAT93C4614PI-45TE13
9-92
Advanced Information
CAT93CXXXX
Stock No. 21084-01 2/98
can then continue to clock in 8-bit (16-bit for x16 format)
data to be written to the next higher address. Internally,
the address pointer is incremented after each group of
eight clocks (16 clocks for x16 format). If the host
transmits more than 16 bytes (8 words for x16 format)
the address counter ‘wraps around’ and previously
transmitted data will be overwritten.
After receiving a WRITE command, address and the
data, the CS (Chip Select) pin must be deselected for a
minimum of t
CSMIN
. The falling edge of CS will start the
self clocking clear and data store cycle of the memory
location specified in the instruction. The clocking of the
SK pin is not necessary after the device has entered the
self clocking mode. The ready/busy status of the
CAT93CXXXX can be determined by selecting the de-
vice and polling the DO pin. Since this device features
Auto-Clear before write, it is NOT necessary to erase a
memory location before it is written into.
Erase
Upon receiving an ERASE command and address, the
CS (Chip Select) pin must be deasserted for a minimum
of t
CSMIN
. The falling edge of CS will start the self clocking
clear cycle of the selected memory location. The clock-
ing of the SK pin is not necessary after the device has
entered the self clocking mode. The ready/busy status of
the CAT93CXXXX can be determined by selecting the
device and polling the DO pin. Once cleared, the content
of a cleared location returns to a logical “1” state.
Figure 5. Erase Instruction Timing
Figure 4. Write Instruction Timing
SK
CS
DI
DO
tCS
STANDBY
HIGH-Z
HIGH-Z
1
0
1
AN
AN-1
A0
DN
D0
BUSY
READY
STATUS
VERIFY
tSV
tHZ
tEW
SK
CS
DI
DO
STANDBY
HIGH-Z
HIGH-Z
1
AN
AN-1
BUSY
READY
STATUS VERIFY
tSV
tHZ
tEW
tCS
1
1
A0
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