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參數(shù)資料
| 型號(hào)： | CAT24C03VP2I-3 |
| 元件分類： | EEPROM |
| 英文描述： | 2-Kb I2C CMOS Serial EEPROM with Partial Array Write Protection |
| 中文描述： | 2 KB的的CMOS串行EEPROM的I2C偏陣列寫保護(hù) |
| 文件頁數(shù)： | 17/20頁 |
| 文件大?。?/td> | 410K |
| 代理商： | CAT24C03VP2I-3 |
CAT24C03
17
Doc No. 1113, Rev. A
2006 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Embossed Tape—Constant Dimensions
(1)
Tape Sizes
D
E
P
0
T Max.
400
(0.016)
D
1
Min.
1.5
(0.059)
A
0
B
0
K
0(2)
12mm
1.5 (0.059)
1.6 (0.063)
1.65 (0.065)
1.85 (0.073)
3.9 (0.153)
4.1 (0.161)
Embossed Carrier Dimensions (12 Tape Only)
Tape Sizes
B
1
Max.
8.2
(0.0323)
F
K Max.
4.5
(0.177)
P
2
R Min.
30
(1.181)
W
P
12mm
5.45 (0.0215)
5.55 (0.219)
1.95 (0.077)
2.05 (0.081)
11.7 (0.460)
12.3 (0.484)
7.9 (0.275)
8.1 (0.355)
Note:
(1) Metric dimensions will govern; English measurements rounded, for reference only and in parentheses.
(2) A0 B0 K0 are determined by component size. The clearance between the component and the cavity must be within 0.05 (0.002) min. to
0.65 (0.026) max. for 12mm tape, 0.05 (0.002) min. to 0.90 (0.035) max. for 16mm tape, and 0.05 (0.002) min. to 1.00 (0.039) max. for
24mm tape and larger. The component cannot rotate more than 20° within the determined cavity, see Component Rotation.
Embossed Carrier Dimensions (12 Tape Only)
W
E
F
B0
A0
P
D
P0
P2
D1
FOR COMPONENTS
2.0mm X 1.2mm
AND LARGER
10 PITCHES
CUMULATIVE TOLERANCE
ON TAPE
0.2mm(
0.008)
EMBOSSMENT
(2)
K0
B1
K
T
FOR MACHINE REFERENCE ONLY
INCLUDING DRAFT AND RADII
CONCENTRIC ABOUT B0
USER DIRECTION OF FEED
CENTER LINES
OF CAVITY
(2)
TOP
COVER
TAPE
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| CAT24C03VP2I-G | 2-Kb I2C CMOS Serial EEPROM with Partial Array Write Protection |
| CAT24C03VP2I-T | 2-Kb I2C CMOS Serial EEPROM with Partial Array Write Protection |
| CAT24C03WI-3 | 2-Kb I2C CMOS Serial EEPROM with Partial Array Write Protection |
| CAT24C03WI-G | 2-Kb I2C CMOS Serial EEPROM with Partial Array Write Protection |
| CAT24C03WI-T | 2-Kb I2C CMOS Serial EEPROM with Partial Array Write Protection |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT24C03VP2I-G | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:2-Kb I2C CMOS Serial EEPROM with Partial Array Write Protection |
| CAT24C03VP2I-G3 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:2-Kb and 4-Kb I2C Serial EEPROM with Partial Array Write Protection |
| CAT24C03VP2I-GT | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:2-Kb and 4-Kb I2C Serial EEPROM with Partial Array Write Protection |
| CAT24C03VP2I-GT3 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 2K-Bit I2C Serial RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT24C03VP2I-T | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:2-Kb and 4-Kb I2C Serial EEPROM with Partial Array Write Protection |
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