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參數(shù)資料
| 型號(hào)： | CA5160M96 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | 4MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output |
| 中文描述： | OP-AMP, 15000 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO8 |
| 文件頁(yè)數(shù)： | 4/18頁(yè) |
| 文件大小： | 910K |
| 代理商： | CA5160M96 |
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3-4
Block Diagram
Maximum Output
Current
I
OM
+ (Source)
I
O
V
O
= 0V
12
22
45
mA
I
OM
- (Sink)
V
O
= 15V
R
L
=
∞
, V
O
= 7.5V
R
L
=
∞
, V
O
= 0V
12
20
45
mA
Supply Current
I+
-
10
15
mA
-
2
3
mA
Input Offset Voltage Temperature Drift
V
IO
/
T
-
8
-
μ
V/
o
C
Electrical Specifications
T
A
= 25
o
C, V+ = 15V, V- = 0V, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST
CONDITIONS
CA5160
UNITS
MIN
TYP
MAX
Electrical Specifications
For Design Guidance, At T
A
= 25
o
C, V
SUPPLY
=
±
7.5V, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
TYPICAL
VALUES
UNITS
CA5160
Input Offset Voltage Adjustment Range
10k
Across Terminals 4 and 5 or 4 and 1
±
22
mV
Input Resistance
R
I
1.5
T
Input Capacitance
C
I
f = 1MHz
4.3
pF
Equivalent Input Noise Voltage
e
N
BW = 0.2MHz, R
S
= 1M
40
μ
V
BW = 0.2MHz, R
S
= 10M
50
μ
V
Equivalent Input Noise Voltage
e
N
R
S
= 100
, 1kHz
72
nV/
√
Hz
R
S
= 100
, 10kHz
30
nV/
√
Hz
Unity Gain Crossover Frequency
f
T
4
MHz
Slew Rate
SR
10
V/
μ
s
Transient Response
Rise Time
t
R
C
C
= 25pF, R
L
= 2k
(Voltage Follower)
0.09
μ
s
Overshoot
OS
10
%
Settling Time (To <0.1%, V
IN
= 4V
P-P
)
t
S
C
C
= 25pF, R
L
= 2k
, (Voltage Follower)
1.8
μ
s
BIAS CKT.
200
μ
A
1.35mA
200
μ
A
3
2
-
8
4
6
8mA
(NOTE 5)
0mA
(NOTE 6)
OUTPUT
A
V
≈
30X
A
V
≈
6000X
STROBE
V-
V+
OFFSET
NULL
COMPENSATION
(WHEN DESIRED)
+
INPUT
A
V
≈
5X
C
C
NOTE:
5. Total supply voltage (for indicated voltage
gains) = 15V with input terminals biased so
that Terminal 6 potential is +7.5V above
Terminal 4.
6. Total supply voltage (for indicated voltage
gains) = 15V with output terminal driven to
either supply rail.
5
1
7
CA5160
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