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參數(shù)資料
| 型號： | CA3102MZ |
| 廠商： | Intersil |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC OP AMP DUAL HI FREQ 14-SOIC |
| 標準包裝： | 50 |
| 放大器類型： | 差分 |
| 電路數(shù)： | 2 |
| 增益帶寬積： | 1.35GHz |
| 電流 - 輸入偏壓： | 13.5µA |
| 電壓 - 輸入偏移： | 250µV |
| 工作溫度： | -55°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 14-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 14-SOIC |
| 包裝： | 管件 |
2
611.7
October 12, 2005
Absolute Maximum Ratings
Thermal Information
Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage, VCBO. . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage, VCIO (Note 1). . . . . . . . . . . . . . 20V
Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Thermal Resistance (Typical, Note 2)
θ
JA (
oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
110
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
205
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3102 is isolated from the substrate by an integral diode. The substrate (Terminal 9) must be connected
to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2.
θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA = 25
oC
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS FOR EACH DIFFERENTIAL AMPLIFIER
Input Offset Voltage (Figures 1, 4)
VIO
-
0.25
5.0
mV
Input Offset Current (Figure 1)
IIO
I3 = I9 = 2mA
-
0.3
3.0
μA
Input Bias Current (Figures 1, 5)
IB
-
13.5
33
μA
Temperature Coefficient
Magnitude of Input Offset Voltage
-1.1
-
μV/oC
DC CHARACTERISTICS FOR EACH TRANSISTOR
DC Forward Base-to-Emitter Voltage
(Figure 6)
VBE
VCE = 6V, IC = 1mA
674
774
874
mV
Temperature Coefficient of
Base-to-Emitter Voltage
(Figure 6)
VCE = 6V, IC = 1mA
-
-0.9
-
mV/oC
Collector Cutoff Current (Figure 7)
ICBO
VCB = 10V, IE = 0
-
0.0013
100
nA
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0
15
24
-
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC = 10μA, IE = 0
20
60
-
V
Collector-to-Substrate Breakdown Voltage
V(BR)CIO
IC = 10μA, IB = IE = 0
20
60
-
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE = 10μA, IC = 0
5
7
-
V
DYNAMIC CHARACTERISTICS FOR EACH DIFFERENTIAL AMPLIFIER
1/f Noise Figure (For Single Transistor)
(Figure 12)
NF
f = 100kHz, RS = 500Ω,
IC = 1mA
-1.5
-
dB
Gain Bandwidth Product (For Single
Transistor) (Figure 11)
fT
VCE = 6V, IC = 5mA
-
1.35
-
GHz
Collector-Base Capacitance (Figure 8)
CCB
IC = 0,
VCB = 5V
Note 3
-
0.28
-
pF
Note 4
-
0.15
-
pF
Collector-Substrate
Capacitance (Figure 8)
CCI
IC = 0, VCI = 5V
-
1.65
-
pF
Common Mode Rejection Ratio
CMRR
I3 = I9 = 2mA
-
100
-
dB
AGC Range, One Stage (Figure 2)
AGC
Bias Voltage = -6V
-
75
-
dB
Voltage Gain, Single-Ended Output
(Figures 2, 9, 10)
A
Bias Voltage = -4.2V,
f = 10MHz
18
22
-
dB
ΔV
IO
ΔT
----------------
ΔV
BE
ΔT
---------------
CA3102
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