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參數(shù)資料
| 型號(hào)： | CA3096AE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | HEATSHRINK POLY Q2Z 6X50FT BLK |
| 中文描述： | 50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001-BB |
| 封裝： | MS-001BB, 16 PIN |
| 文件頁(yè)數(shù)： | 4/14頁(yè) |
| 文件大小： | 133K |
| 代理商： | CA3096AE |
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4
Electrical Specifications
Typical Values Intended Only for Design Guidance At T
A
= 25
o
C
PARAMETER
SYMBOL
TEST CONDITIONS
TYPICAL
VALUES
UNITS
DYNAMIC CHARACTERISTICS FOR EACH NPN TRANSISTOR
Noise Figure (Low Frequency)
NF
f = 1kHz, V
CE
= 5V, I
C
= 1mA, R
S
= 1k
2.2
dB
Low-Frequency, Input Resistance
R
I
f = 1.0kHz, V
CE
= 5V I
C
= 1 mA
10
k
Low-Frequency Output Resistance
R
O
f = 1.0kHz, V
CE
= 5V I
C
= 1 mA
80
k
Admittance Characteristics
Forward Transfer Admittance
y
FE
g
FE
f = 1MHz, V
CE
= 5V, I
C
= 1mA
7.5
mS
b
FE
f = 1MHz, V
CE
= 5V, I
C
= 1mA
-j13
mS
Input Admittance
y
IE
g
IE
f = 1MHz, V
CE
= 5V, I
C
= 1mA
2.2
mS
b
IE
f = 1MHz, V
CE
= 5V, I
C
= 1mA
j3.1
mS
Output Admittance
y
OE
g
OE
f = 1MHz, V
CE
= 5V, I
C
= 1mA
0.76
mS
b
OE
f = 1MHz, V
CE
= 5V, I
C
= 1mA
j2.4
mS
Gain-Bandwidth Product
f
T
V
CE
= 5V, I
C
= 1.0mA
280
MHz
V
CE
= 5V, I
C
= 5mA
335
MHz
Emitter-To-Base Capacitance
C
EB
V
EB
= 3V
0.75
pF
Collector-To-Base Capacitance
C
CB
V
CB
= 3V
0.46
pF
Collector-To-Substrate Capacitance
C
CI
V
CI
= 3V
3.2
pF
DYNAMIC CHARACTERISTICS FOR EACH PNP TRANSISTOR
Noise Figure (Low Frequency)
NF
f = 1kHz, I
C
= 100
μ
A, R
S
= 1k
3
dB
Low-Frequency Input Resistance
R
I
f = 1kHz, V
CE
= 5V, I
C
= 100
μ
A
27
k
Low-Frequency Output Resistance
R
O
f = 1kHz, V
CE
= 5V, I
C
= 100
μ
A
680
k
Gain-Bandwidth Product
f
T
V
CE
= 5V, I
C
= 100
μ
A
6.8
MHz
Emitter-To-Base Capacitance
C
EB
V
EB
= -3V
0.85
pF
Collector-To-Base Capacitance
C
CB
V
CB
= -3V
2.25
pF
Base-To-Substrate Capacitance
C
BI
V
BI
= 3V
3.05
pF
Typical Applications
FIGURE 1. FREQUENCY COMPARATOR USING CA3096
FIGURE 2. FREQUENCY COMPARATOR CHARACTERISTICS
2
4
3
6
1
5
15
10
12
9
7
14
8
13
11
16
(SUBSTRATE)
1
μ
F
3k
3k
500
500
1k
1k
0.1
μ
F
0.1
μ
F
44003
Q
4
Q
5
OUTPUT
Q
2
f
1
f
2
V+ = 10V
NOTE: F
1
OR F
2
< 10kHz
O
9
8
7
6
5
4
3
2
1
0
-20
-10
0
10
20
f
2
- f
1
> 0
FREQUENCY DEVIATION (kHz)
f
1
= f
2
f
1
- f
2
> 0
CENTER FREQUENCY: 1kHz
CA3096, CA3096A, CA3096C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CA3096AM | NPN/PNP Transistor Arrays |
| CA3096AM96 | NPN/PNP Transistor Arrays |
| CA3096C | NPN/PNP Transistor Arrays |
| CA3096CE | NPN/PNP Transistor Arrays |
| CA3096E | NPN/PNP Transistor Arrays |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CA3096AM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:NPN/PNP Transistor Arrays |
| CA3096AM96 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:NPN/PNP Transistor Arrays |
| CA3096C | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:NPN/PNP Transistor Arrays |
| CA3096CE | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:NPN/PNP Transistor Arrays |
| CA3096CM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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