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參數(shù)資料
| 型號： | CA3054MZ96 |
| 廠商： | Intersil |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 0K |
| 描述： | IC OP AMP 2X DIFF 14-SOIC |
| 標準包裝： | 2,500 |
| 放大器類型： | 差分 |
| 電路數(shù)： | 2 |
| 增益帶寬積： | 550MHz |
| 電流 - 輸入偏壓： | 10µA |
| 電壓 - 輸入偏移： | 450µV |
| 工作溫度： | 0°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 14-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 14-SOIC |
| 包裝： | 帶卷 (TR) |
3
FOR EACH TRANSISTOR
DC Forward Base-to-Emitter Voltage
(Figure 8)
VBE
VCB = 3V
IC = 50A
-
0.630
0.700
V
IC = 1mA
-
0.715
0.800
V
IC = 3mA
-
0.750
0.850
V
IC = 10mA
-
0.800
0.900
V
Temperature Coefficient of Base-to-Emitter
Voltage (Figure 6)
VCB = 3V, IC = 1mA
-
-1.9
-
V/°C
Collector Cutoff Current (Figure 4)
ICBO
VCB = 10V, IE = 0
-
0.002
100
nA
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0
15
24
-
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC = 10A, IE = 0
20
60
-
V
Collector-to-Substrate Breakdown
Voltage
V(BR)CIO
IC = 10A, ICI = 0
20
60
-
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE = 10A, IC = 0
5
7
-
V
DYNAMIC CHARACTERISTICS
Common Mode Rejection Ratio for each
Amplifier (Figures 1, 10)
CMRR
VCC = 12V, VEE = -6V,
VX = -3.3V, f = 1kHz
-
100
-
dB
AGC Range, One Stage (Figures 2, 11)
AGC
VCC = 12V, VEE = -6V,
VX = -3.3V, f = 1kHz
-75
-
dB
Voltage Gain, Single Stage Double-Ended
Output (Figures 2, 11)
AVCC = 12V, VEE = -6V,
VX = -3.3V, f = 1kHz
-32
-
dB
AGC Range, Two Stage (Figures 3, 12)
AGC
VCC = 12V, VEE = -6V,
VX = -3.3V, f = 1kHz
-
105
-
dB
Voltage Gain, Two Stage Double-Ended Output
(Figures 3, 12)
AVCC = 12V, VEE = -6V,
VX = -3.3V, f = 1kHz
-60
-
dB
Low Frequency, Small Signal Equivalent Circuit Char-
acteristics (For Single Transistor)
Forward Current Transfer Ratio (Figure 13)
hFE
f = 1kHz, VCE = 3V, IC = 1mA
-
110
-
Short Circuit Input Impedance (Figure 13)
hIE
f = 1kHz, VCE = 3V, IC = 1mA
-
3.5
-
k
Open Circuit Output Impedance
(Figure 13)
hOE
f = 1kHz, VCE = 3V, IC = 1mA
-
15.6
-
S
Open Circuit Reverse Voltage Transfer
Ratio (Figure 13)
hRE
f = 1kHz, VCE = 3V, IC = 1mA
-
1.8 x
10-4
--
1/f Noise Figure for Single Transistor
NF
f = 1kHz, VCE = 3V
-
3.25
-
dB
Gain Bandwidth Product for Single
Transistor (Figure 14)
fT
VCE = 3V, IC = 3mA
-
550
-
MHz
Admittance Characteristics; Differential
Circuit Configuration (For Each Amplifier)
Forward Transfer Admittance (Figure 15)
Y21
VCB = 3V, f = 1MHz
Each Collector IC ≈ 1.25mA
--20 + j0
-
mS
Input Admittance (Figure 16)
Y11
VCB = 3V, f = 1MHz
Each Collector IC ≈ 1.25mA
-
0.22 +
j0.1
-mS
Output Admittance (Figure 17)
Y22
VCB = 3V, f = 1MHz
Each Collector IC ≈ 1.25mA
-
0.01 +
j0
-mS
Reverse Transfer Admittance (Figure 18)
Y12
VCB = 3V, f = 1MHz
Each Collector IC ≈ 1.25mA
-
-0.003
+ j0
-mS
Electrical Specifications TA = 25°C (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
BE
T
----------------
CA3054
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