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參數(shù)資料
| 型號： | C67076-A2514-A67 |
| 廠商： | SIEMENS AG |
| 英文描述： | IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) |
| 中文描述： | IGBT功率模塊（功率模塊3相全橋包括快速滑行二極管） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 126K |
| 代理商： | C67076-A2514-A67 |
Semiconductor Group
2
Jan-10-1997
BSM 50 GD 120 DN2
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Gate threshold voltage
V
GE
= V
CE,
I
C
= 2 mA
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 50 A, T
j
= 25 °C
V
GE
= 15 V, I
C
= 50 A, T
j
= 125 °C
Zero gate voltage collector current
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 25 °C
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 125 °C
Gate-emitter leakage current
V
GE
= 20 V, V
CE
= 0 V
V
GE(th)
4.5
5.5
6.5
V
V
CE(sat)
-
-
3.1
2.5
3.7
3
I
CES
-
-
4
0.8
-
1
mA
I
GES
-
-
200
nA
AC Characteristics
Transconductance
V
CE
= 20 V, I
C
= 50 A
Input capacitance
g
fs
23
-
-
S
V
CE
= 25 V, V
GE
= 0 V, f= 1 MHz
Output capacitance
V
CE
= 25 V, V
GE
= 0 V, f= 1 MHz
Reverse transfer capacitance
V
CE
= 25 V, V
GE
= 0 V, f= 1 MHz
C
iss
-
3300
-
pF
C
oss
-
500
-
C
rss
-
220
-
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C67076-A2515-A67 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) |
| C67076-S1013-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
| C67076-S1014-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
| C67076-S1018-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
| C67078-A1000-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:main ratings |
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