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| 型號： | C122F1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifier Reverse Blocking Thyristor(8A（均方根值）,50V硅控整流器反向截止晶閘管) |
| 中文描述： | 8 A, 50 V, SCR, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 115K |
| 代理商： | C122F1 |
C122F1, C122B1
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
TL
1.8
°
C/W
Thermal Resistance, Junction to Ambient
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TC = 25
°
C
TC = 125
°
C
IDRM, IRRM
—
—
—
—
10
0.5
μ
A
mA
ON CHARACTERISTICS
Peak On–State Voltage(1)
(ITM = 16 A Peak, TC = 25
°
C)
VTM
—
—
1.83
Volts
Gate Trigger Current (Continuous dc)
(VAK = 12 V, RL = 100 Ohms)
TC = 25
°
C
TC = –40
°
C
IGT
—
—
—
—
25
40
mA
Gate Trigger Voltage (Continuous dc)
(VAK = 12 V, RL = 100 Ohms)
TC = 25
°
C
TC = –40
°
C
VGT
—
—
—
—
1.5
2.0
Volts
Gate Non–Trigger Voltage (Continuous dc)
(VAK = 12 V, RL = 100 Ohms, TC = 125
°
C)
VGD
0.2
—
—
Volts
Holding Current
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = 25
°
C
TC = –40
°
C
IH
—
—
—
—
30
60
mA
Turn-Off Time (VD = Rated VDRM)
(ITM = 8 A, IR = 8 A)
DYNAMIC CHARACTERISTICS
tq
—
50
—
μ
s
Critical Rate–of–Rise of Off–State Voltage
(VAK = Rated VDRM, Exponential Waveform, Gate Open, TC = 100
°
C)
(1) Pulse Test: Pulse Width
≤
1 ms, Duty Cycle
≤
2%.
dv/dt
—
50
—
V/
μ
s
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