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參數(shù)資料
| 型號： | C122F1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifier Reverse Blocking Thyristor(8A（均方根值）,50V硅控整流器反向截止晶閘管) |
| 中文描述： | 8 A, 50 V, SCR, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 115K |
| 代理商： | C122F1 |
Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 2
1
Publication Order Number:
C122F1/D
Reverse Blocking Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half–wave silicon gate–controlled, solid–state devices are needed.
Glass Passivated Junctions and Center Gate Fire for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 200 Volts
Device Marking: Logo, Device Type, e.g., C122F1, Date Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage(1)
(TJ = 25 to 100
°
C, Sine Wave,
50 to 60 Hz; Gate Open)
Symbol
Value
Unit
C122F1
C122B1
VDRM,
VRRM
50
200
Volts
On-State RMS Current
(180
°
Conduction Angles; TC = 75
°
C)
IT(RMS)
8.0
Amps
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TC = 75
°
C)
ITSM
90
Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I2t
34
A2s
Forward Peak Gate Power
(Pulse Width = 10
μ
s, TC = 70
°
C)
PGM
5.0
Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 70
°
C)
PG(AV)
0.5
Watt
Forward Peak Gate Current
(Pulse Width = 10
μ
s, TC = 70
°
C)
IGM
2.0
Amps
Operating Junction Temperature Range
TJ
–40 to
+125
°
C
Storage Temperature Range
Tstg
–40 to
+150
°
C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
8 AMPERES RMS
50 thru 200 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
C122F1
TO220AB
500/Box
C122B1
TO220AB
http://onsemi.com
500/Box
K
G
A
TO–220AB
CASE 221A
STYLE 3
123
4
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
相關PDF資料 |
PDF描述 |
|---|---|
| C122F1 | SCRs 8 AMPERES RMS 50 thru 800 VOLTS |
| C122A1 | SILICON CONTROLLED RECTIFIERS |
| C122D1 | SILICON CONTROLLED RECTIFIERS |
| C122B1 | SILICON CONTROLLED RECTIFIERS |
| C122M1 | SILICON CONTROLLED RECTIFIERS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| C122F1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon Controlled Rectifiers |
| C122F1G | 功能描述:SCR 50V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| C122J11S105DQA | 制造商:ITT 制造商全稱:ITT Industries 功能描述:Power Rocker Switches |
| C122J11S105DQF | 制造商:ITT 制造商全稱:ITT Industries 功能描述:Power Rocker Switches |
| C122J11S105PQA | 制造商:ITT 制造商全稱:ITT Industries 功能描述:Power Rocker Switches |
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