參數(shù)資料
型號: C122B1G
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Silicon Controlled Rectifiers Reverse Blocking Thyristors
中文描述: 8 A, 200 V, SCR, TO-220AB
封裝: LEAD FREE, CASE 221A-07, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 67K
代理商: C122B1G
C122F1, C122B1
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
R
JC
1.8
°
C/W
Thermal Resistance, JunctiontoAmbient
R
JA
T
L
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
T
C
= 25
°
C
T
C
= 125
°
C
I
DRM
, I
RRM
10
0.5
A
mA
ON CHARACTERISTICS
Peak OnState Voltage (Note 2)
(I
TM
= 16 A Peak, T
C
= 25
°
C)
V
TM
1.83
V
Gate Trigger Current (Continuous dc)
(V
AK
= 12 V, R
L
= 100 )
T
C
= 25
°
C
T
C
= 40
°
C
I
GT
25
40
mA
Gate Trigger Voltage (Continuous dc)
(V
AK
= 12 V, R
L
= 100 )
T
C
= 25
°
C
T
C
= 40
°
C
V
GT
1.5
2.0
V
Gate NonTrigger Voltage (Continuous dc)
(V
AK
= 12 V, R
L
= 100 , T
C
= 125
°
C)
V
GD
0.2
V
Holding Current
(V
AK
= 12 Vdc, Initiating Current = 200 mA, Gate Open) T
C
= 25
°
C
T
C
= 40
°
C
I
H
30
60
mA
Turn-Off Time (V
D
= Rated V
DRM
)
(I
TM
= 8 A, I
R
= 8 A)
t
q
50
s
DYNAMIC CHARACTERISTICS
Critical RateofRise of OffState Voltage
(V
AK
= Rated V
DRM
, Exponential Waveform, Gate Open, T
C
= 100
°
C)
2. Pulse Test: Pulse Width
1 ms, Duty Cycle
2%.
dv/dt
50
V/ s
相關(guān)PDF資料
PDF描述
C122F1G Silicon Controlled Rectifiers Reverse Blocking Thyristors
C122B1 Silicon Controlled Rectifier Reverse Blocking Thyristor(8A(均方根值),200V硅控整流器反向截止晶閘管)
C122F1 Silicon Controlled Rectifier Reverse Blocking Thyristor(8A(均方根值),50V硅控整流器反向截止晶閘管)
C122F1 SCRs 8 AMPERES RMS 50 thru 800 VOLTS
C122A1 SILICON CONTROLLED RECTIFIERS
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