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參數(shù)資料
| 型號(hào)： | C106M1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Silicon Controlled Rectifiers |
| 中文描述： | 4 A, 600 V, SCR, TO-225AA |
| 封裝： | CASE 77-09, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | C106M1 |
C106 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, R
GK
= 1000 Ohms)
T
J
= 25
°
C
T
J
= 110
°
C
I
DRM
, I
RRM
10
100
A
A
ON CHARACTERISTICS
Peak Forward OnState Voltage (Note 3)
(I
TM
= 4 A)
V
TM
2.2
V
Gate Trigger Current (Continuous dc) (Note 4)
(V
AK
= 6 Vdc, R
L
= 100 Ohms)
T
J
= 25
°
C
T
J
= 40
°
C
I
GT
15
35
200
500
A
Peak Reverse Gate Voltage (I
GR
= 10 A)
V
GRM
6.0
V
Gate Trigger Voltage (Continuous dc) (Note 4)
(V
AK
= 6 Vdc, R
L
= 100 Ohms)
T
J
= 25
°
C
T
J
= 40
°
C
V
GT
0.4
0.5
0.60
0.75
0.8
1.0
V
Gate NonTrigger Voltage (Continuous dc) (Note 4)
(V
AK
= 12 V, R
L
= 100 Ohms, T
J
= 110
°
C)
V
GD
0.2
V
Latching Current
(V
AK
= 12 V, I
G
= 20 mA)
T
J
= 25
°
C
T
J
= 40
°
C
I
L
0.20
0.35
5.0
7.0
mA
Holding Current (V
D
= 12 Vdc)
(Initiating Current = 20 mA, Gate Open)
T
J
= 25
°
C
T
J
= 40
°
C
T
J
= +110
°
C
I
H
0.19
0.33
0.07
3.0
6.0
2.0
mA
DYNAMIC CHARACTERISTICS
Critical RateofRise of OffState Voltage
(V
AK
= Rated V
DRM
, Exponential Waveform, R
GK
= 1000 Ohms,
T
J
= 110
°
C)
3. Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
4. R
GK
is not included in measurement.
dv/dt
8.0
V/ s
+ Current
+ Voltage
V
TM
I
DRM
at V
DRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
(off state)
I
RRM
at V
RRM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C106M1G | 功能描述:SCR 600V 4A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| C106M2 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS |
| C106M-600V | 制造商:TGS 制造商全稱:Tiger Electronic Co.,Ltd 功能描述:Thyristors logic level |
| C106MG | 功能描述:SCR 600V 4A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| C106N | 制造商:GESS 制造商全稱:GESS 功能描述:4-A Sensitive-Gate Silicon Controlled Rectifiers |
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