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參數(shù)資料
| 型號(hào)： | C106M1 |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | Sensitive Gate Silicon Controlled Rectifiers |
| 中文描述： | 4 A, 600 V, SCR, TO-225AA |
| 封裝： | CASE 77-09, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | C106M1 |
C106 Series
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Max
Unit
Peak Repetitive OffState Voltage (Note 1)
(Sine Wave, 5060 Hz, R
GK
= 1 k ,
T
C
= 40
°
to 110
°
C)
C106B
C106D, C106D1*
C106M, C106M1*
V
DRM,
V
RRM
200
400
600
4.0
V
On-State RMS Current
(180
°
Conduction Angles, T
C
= 80
°
C)
Average OnState Current
(180
°
Conduction Angles, T
C
= 80
°
C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= +110
°
C)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width
1.0 sec, T
C
= 80
°
C)
Forward Average Gate Power
(Pulse Width
1.0 sec, T
C
= 80
°
C)
Forward Peak Gate Current
(Pulse Width
1.0 sec, T
C
= 80
°
C)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (Note 2)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
THERMAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted.)
I
T(RMS)
A
I
T(AV)
2.55
A
I
TSM
20
A
I
2
t
P
GM
1.65
0.5
A
2
s
W
P
G(AV)
0.1
W
I
GM
0.2
A
T
J
T
stg
40 to +110
40 to +150
6.0
°
C
°
C
in. lb.
Characteristic
Symbol
Max
Unit
°
C/W
°
C/W
°
C
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds
R
JC
R
JA
T
L
3.0
75
260
ORDERING INFORMATION
Device
Package
Shipping
C106B
TO225AA
500 Units / Box
C106BG
TO225AA
(PbFree)
500 Units / Box
C106D
TO225AA
500 Units / Box
C106DG
TO225AA
(PbFree)
500 Units / Box
C106D1*
TO225AA
500 Units / Box
C106D1G*
TO225AA
(PbFree)
500 Units / Box
C106M
TO225AA
500 Units / Box
C106MG
TO225AA
(PbFree)
500 Units / Box
C106M1*
TO225AA
500 Units / Box
C106M1G*
TO225AA
(PbFree)
500 Units / Box
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*D1 signifies European equivalent for D suffix and M1 signifies European equivalent for M suffix.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| C106BG | Sensitive Gate Silicon Controlled Rectifiers |
| C106D1G | Sensitive Gate Silicon Controlled Rectifiers |
| C106DG | Sensitive Gate Silicon Controlled Rectifiers |
| C106M1G | Sensitive Gate Silicon Controlled Rectifiers |
| C106MG | Sensitive Gate Silicon Controlled Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C106M1G | 功能描述:SCR 600V 4A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| C106M2 | 制造商:CENTRAL 制造商全稱(chēng):Central Semiconductor Corp 功能描述:SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS |
| C106M-600V | 制造商:TGS 制造商全稱(chēng):Tiger Electronic Co.,Ltd 功能描述:Thyristors logic level |
| C106MG | 功能描述:SCR 600V 4A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| C106N | 制造商:GESS 制造商全稱(chēng):GESS 功能描述:4-A Sensitive-Gate Silicon Controlled Rectifiers |
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