參數資料
型號: C106F
廠商: MOTOROLA INC
元件分類: 晶閘管
英文描述: SCRs 4 AMPERES RMS 50 thru 600 VOLTS
中文描述: 4 A, 50 V, SCR, TO-225AA
文件頁數: 2/4頁
文件大?。?/td> 111K
代理商: C106F
2
Motorola Thyristor Device Data
MAXIMUM RATINGS —
continued
Rating
Symbol
Value
Unit
Peak Reverse Gate Voltage
VGRM
TJ
Tstg
6
Volts
Operating Junction Temperature Range
–40 to +110
°
C
Storage Temperature Range
Mounting Torque(1)
–40 to +150
°
C
6
in. lb.
1. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200
°
C. For optimum
results, an activated flux (oxide removing) is recommended.
THERMAL CHARACTERISTICS
(TC = 25
°
C, RGK = 1 k
unless otherwise noted.)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
3
°
C/W
Thermal Resistance, Junction to Ambient
75
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms)
TJ = 25
°
C
TJ = 110
°
C
IDRM, IRRM
10
100
μ
A
μ
A
Forward “On” Voltage
(IFM = 1 A Peak)
VTM
2.2
Volts
Gate Trigger Current (Continuous dc)
(VAK = 6 Vdc, RL = 100 Ohms)
(VAK = 6 Vdc, RL = 100 Ohms,
TC = –40
°
C)
IGT
30
75
200
500
μ
A
Gate Trigger Voltage (Continuous dc)
(VAK = 6 Vdc, RL = 100 Ohms, RGK = 1000 Ohms) TJ = 25
°
C
(VAK = Rated VDRM, RL = 3000 Ohms,
RGK = 1000 Ohms, TJ = 110
°
C)
Holding Current
(VD = 12 Vdc, RGK = 1000 Ohms)
TJ = –40
°
C
TJ = 25
°
C
TJ = –40
°
C
TJ = +110
°
C
VGT
0.4
0.5
0.2
0.8
1
Volts
IHX
0.3
0.4
0.14
3
6
2
mA
Forward Voltage Application Rate
(TJ = 110
°
C, RGK = 1000 Ohms, VD = Rated VDRM)
dv/dt
8
V/
μ
s
Turn-On Time
tgt
tq
1.2
μ
s
Turn-Off Time
40
μ
s
DC
DC
JUNCTION TEMPERATURE
110
°
C
100
10
20
30
40
70
110
90
3.6
80
0
.4
.8
1.6
1.2
2.0
2.4
3.2
60
4.0
IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz
50
6
4
2
0
8
FIGURE 1 – AVERAGE CURRENT DERATING
0
10
2.8
FIGURE 2 – MAXIMUM ON-STATE POWER DISSIPATION
3.6
.4
.8
1.6
1.2
2.0
2.4
3.2
4.0
2.6
IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
C
°
T
P
(
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