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參數(shù)資料
| 型號(hào)： | BZT52H-B11 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Single Zener diodes in a SOD123F package |
| 中文描述： | 11 V, 0.375 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 118K |
| 代理商： | BZT52H-B11 |
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
6 of 13
NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
[1]
f = 1 MHz; V
R
= 0 V.
t
p
= 100
μ
s; T
amb
= 25
°
C.
[2]
[1]
f = 1 MHz; V
R
= 0 V.
t
p
= 100
μ
s; T
amb
= 25
°
C.
[2]
Table 9.
T
j
= 25
°
C unless otherwise specified.
BZT52H
-xxx
voltage
V
Z
(V);
I
Z
= 2 mA
Min
27
B
26.5
C
25.1
30
B
29.4
C
28.0
33
B
32.3
C
31.0
36
B
35.3
C
34.0
39
B
38.2
C
37.0
43
B
42.1
C
40.0
47
B
46.1
C
44.0
51
B
50.0
C
48.0
Characteristics per type; BZT52H-B27 to BZT52H-C51
Sel
Working
Maximum differential
resistance r
dif
(
Ω
)
Reverse
current I
R
(
μ
A)
Temperature
coefficient
S
Z
(mV/K);
I
Z
= 5 mA
Min
21.4
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
Max
1.0
Max
27.5
28.9
30.6
32.0
33.7
35.0
36.7
38.0
39.8
41.0
43.9
46.0
47.9
50.0
52.0
54.0
I
Z
= 1 mA
250
I
Z
= 5 mA
40
Max
0.05
V
R
(V)
18.9
Max
25.3
Max
50
250
40
0.05
21
24.4
29.4
50
1.0
250
40
0.05
23.1
27.4
33.4
45
0.9
250
60
0.05
25.2
30.4
37.4
45
0.8
300
75
0.05
27.3
33.4
41.2
45
0.7
325
80
0.05
30.1
37.6
46.6
40
0.6
325
90
0.05
32.9
42.0
51.8
40
0.5
350
100
0.05
35.7
46.6
57.2
40
0.4
Table 10.
T
j
= 25
°
C unless otherwise specified.
BZT52H
-xxx
voltage
V
Z
(V);
I
Z
= 2 mA
Min
56
B
54.9
C
52.0
62
B
60.8
C
58.0
68
B
66.6
C
64.0
75
B
73.5
C
70.0
Characteristics per type; BZT52H-B56 to BZT52H-C75
Sel
Working
Maximum differential
resistance r
dif
(
Ω
)
Reverse
current I
R
(
μ
A)
Temperature
coefficient
S
Z
(mV/K);
I
Z
= 5 mA
Min
52.2
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
Max
0.3
Max
57.1
60.0
63.2
66.0
69.4
72.0
76.5
79.0
I
Z
= 0.5 mA I
Z
= 2 mA Max
375
120
V
R
(V)
39.2
Max
63.8
Max
40
0.05
400
140
0.05
43.4
58.8
71.6
35
0.3
400
160
0.05
47.6
65.6
79.8
35
0.25
400
175
0.05
52.5
73.4
88.6
35
0.20
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BZT52H-B11,115 | 功能描述:穩(wěn)壓二極管 11.2V 8uA 10Ohm RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| BZT52H-B11115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BZT52H-B12 | 制造商:NXP Semiconductors 功能描述:DIODE ZENER 0.375W 12V SOD123F 制造商:NXP Semiconductors 功能描述:DIODE, ZENER, 0.375W, 12V, SOD123F 制造商:NXP Semiconductors 功能描述:DIODE, ZENER, 0.375W, 12V, SOD123F; Zener Voltage Vz Typ:12V; Power Dissipation Pd:375mW; Operating Temperature Min:-65C; Operating Temperature Max:150C; Diode Case Style:SOD-123F; No. of Pins:2 ;RoHS Compliant: Yes |
| BZT52H-B12,115 | 功能描述:穩(wěn)壓二極管 12.2V 8uA 10Ohm RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| BZT52H-B13 | 制造商:NXP Semiconductors 功能描述:DIODE ZENER 0.375W 13V SOD123F 制造商:NXP Semiconductors 功能描述:DIODE, ZENER, 0.375W, 13V, SOD123F 制造商:NXP Semiconductors 功能描述:DIODE, ZENER, 0.375W, 13V, SOD123F; Zener Voltage Vz Typ:13V; Power Dissipation Pd:375mW; Operating Temperature Min:-65C; Operating Temperature Max:150C; Diode Case Style:SOD-123F; No. of Pins:2 ;RoHS Compliant: Yes |
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