參數(shù)資料
型號: BYV40E-150
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Dual ultrafast power diode
封裝: BYV40E-150<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 35, 2003,;
文件頁數(shù): 3/8頁
文件大?。?/td> 113K
代理商: BYV40E-150
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-sp
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
one or both diodes conducting
-
-
15
K/W
R
th j-a
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:11
-
-
156
70
-
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 0.5 A; T
j
= 150C
I
F
= 1.5 A
V
R
= V
RWM
; T
j
= 100 C
V
= V
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
μ
s
I
= 1 A; V
30 V;
-dI
/dt = 100 A/
μ
s
I
F
= 0.5 A to I
= 1 A; I
rec
= 0.25 A
I
F
= 2 A; dI
F
/dt = 20 A/
μ
s
-
-
-
-
-
-
0.50
0.82
100
5
-
-
0.7
1.0
300
10
11
25
V
V
μ
A
μ
A
nC
ns
I
R
Reverse current
Q
s
t
rr1
Reverse recovery charge
Reverse recovery time
t
rr2
V
fr
Reverse recovery time
Forward recovery voltage
-
-
10
3
20
-
ns
V
September 1998
2
Rev 1.300
相關(guān)PDF資料
PDF描述
BYV410-600 Dual enhanced ultrafast power diode
BYV410X-600 Dual enhanced ultrafast power diode
BYV42E-150 Dual ultrafast power diode
BYV42G-200 Dual ultrafast power diode
BYV44-500 Dual ultrafast power diode
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