參數(shù)資料
型號: BYV40E-150
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Dual ultrafast power diode
封裝: BYV40E-150<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 35, 2003,;
文件頁數(shù): 2/8頁
文件大?。?/td> 113K
代理商: BYV40E-150
NXP
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV40E series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
Reverse surge capability
High thermal cycling performance
low profile surface mounting
package
V
R
= 150 V/ 200 V
V
F
0.7 V
I
O(AV)
= 1.5 A
I
RRM
= 0.1 A
t
rr
25 ns
GENERAL DESCRIPTION
PINNING
SOT223
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
PIN
DESCRIPTION
1
anode 1
2
cathode
The BYV40E series is supplied in
the
SOT223
surface
package.
3
anode 2
mounting
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV40E
-150
150
150
150
-200
200
200
200
V
RRM
V
RWM
V
R
I
O(AV)
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current square wave;
δ
= 0.5;
(both diodes conducting)
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current per diode
-
-
-
V
V
V
T
sp
120C
-
1.5
A
T
132C
I
FRM
-
1.5
A
T
132 C
t
p
= 10 ms
t
= 8.3 ms
sinusoidal; T
= 150C prior
to surge; with reapplied
V
I
FSM
-
-
6
A
A
6.6
I
RRM
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
-
0.1
A
I
RSM
t
p
= 100
μ
s
-
0.1
A
T
stg
T
j
-65
-
150
150
C
C
k
a1
1
a2
3
2
4
1
2
3
1
Neglecting switching and reverse current losses
September 1998
1
Rev 1.300
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