參數(shù)資料
型號(hào): BYV34-400
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Dual ultrafast power diode
封裝: BYV34-400<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 117K
代理商: BYV34-400
NXP
Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYV34 series
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 10 A; T
j
= 150C
I
F
= 20 A
V
R
= V
RRM
V
= V
; T
j
= 100 C
I
F
= 2 A to V
R
30 V;
dI
/dt = 20 A/
μ
s
I
F
= 1 A to V
30 V;
dI
/dt = 100 A/
μ
s
I
F
= 10 A to V
R
30 V;
dI
/dt = 50 A/
μ
s; T
= 100C
I
F
= 10 A; dI
F
/dt = 10 A/
μ
s
-
-
-
-
-
0.87
1.10
10
0.2
50
1.05
1.35
50
0.6
60
V
V
μ
A
mA
nC
I
R
Reverse current
Q
s
Reverse recovery charge
t
rr
Reverse recovery time
-
50
60
ns
I
rrm
Peak reverse recovery current
-
4.0
5.0
A
V
fr
Forward recovery voltage
-
2.5
-
V
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square wave where I
F(AV)
=I
F(RMS)
x
Fig.4. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Qs
100%
10%
time
dI
dt
F
IR
IF
Irrm
trr
0
5
10
15
0
5
10
15
20
D = 1.0
0.5
0.2
0.1
BYV34
Rs = 0.0100 Ohms
IF(AV) / A
PF / W
Tmb(max) / C
150
138
126
114
102
D =
t
p
t
p
T
T
t
I
time
time
VF
Vfr
VF
IF
0
2
4
6
8
10
0
2
4
6
8
10
12
a = 1.57
1.9
2.2
2.8
4
BYV34
Rs = 0.01 Ohms
Vo = 0.94 V
IF(AV) / A
PF / W
Tmb(max) / C
150
145.2
140.4
135.6
130.8
126
121.1
conduction
degrees
30
60
90
120
180
form
a
4
2.8
2.2
1.9
1.57
October 1998
2
Rev 1.400
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