參數(shù)資料
型號: BYV34-400
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Dual ultrafast power diode
封裝: BYV34-400<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
文件頁數(shù): 2/7頁
文件大?。?/td> 117K
代理商: BYV34-400
NXP
Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYV34 series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
High thermal cycling performance
Low thermal resistance
V
R
= 300 V/ 400 V/ 500 V
V
F
1.05 V
I
O(AV)
= 20 A
t
rr
60 ns
GENERAL DESCRIPTION
PINNING
SOT78 (TO220AB)
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
PIN
DESCRIPTION
1
anode 1
2
cathode
TheBYV34series issupplied in the
conventional
leaded
(TO220AB) package.
3
anode 2
SOT78
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV34
-300
300
300
300
-400
400
400
400
-500
500
500
500
V
RRM
V
RWM
V
R
I
O(AV)
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current square wave;
δ
= 0.5;
(both diodes conducting)
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current per diode.
-
-
-
V
V
V
T
mb
138C
-
20
A
T
115 C
I
FRM
-
20
A
T
115 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
I
FSM
-
-
120
132
A
A
T
stg
T
j
Storage temperature
Operating junction temperature
-40
-
150
150
C
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
per diode
both diodes conducting
in free air.
-
-
-
-
-
2.4
1.6
-
K/W
K/W
K/W
R
th j-a
60
k
a1
1
a2
3
2
1 2 3
tab
1
Neglecting switching and reverse current losses
October 1998
1
Rev 1.400
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