參數(shù)資料
型號(hào): BYT28-300
廠(chǎng)商: NXP Semiconductors N.V.
元件分類(lèi): 參考電壓二極管
英文描述: Dual ultrafast power diode
封裝: BYT28-300<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
文件頁(yè)數(shù): 4/10頁(yè)
文件大小: 109K
代理商: BYT28-300
BYT28_SER
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 3 November 2011
4 of 10
NXP Semiconductors
BYT28 series
Dual rectifier diodes ultrafast
Fig 2.
Reverse recovery definitions
Fig 3.
Forward recovery definitions
Per diode.
I
F(AV)
= I
F(RMS)
.
Forward power dissipation as a function of
average forward current; maximum values
Per diode.
a = form factor = I
F(RMS)
/ I
F(AV)
.
Forward power dissipation as a function of
average forward current; maximum values
Fig 4.
Fig 5.
001aab911
t
rr
time
100 %
10 %
I
F
dl
F
dt
I
R
I
RM
Q
r
001aab912
time
time
V
FRM
V
F
I
F
V
F
I
F(AV)
(A)
0
8
6
2
4
001aab913
4
6
2
8
10
P
F
(W)
0
T
mb(max)
(
°
C)
114
105
150
118.5
123
127.5
132
136.5
141
145.5
δ
= t
p
T
t
T
I
0.5
0.2
0.1
δ
= 1.0
t
p
I
F(AV)
(A)
0
5
4
2
3
1
001aab914
2
4
6
P
F
(W)
T
mb(max)
(
°
C)
127.5
0
a = 1.57
1.9
2.8
4
2.2
123
132
136.5
145.5
141
150
V
o
=
R
s
=
0.945 V
0.021
Ω
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