參數(shù)資料
型號(hào): BYT28-300
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Dual ultrafast power diode
封裝: BYT28-300<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 109K
代理商: BYT28-300
BYT28_SER
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 3 November 2011
3 of 10
NXP Semiconductors
BYT28 series
Dual rectifier diodes ultrafast
6. Characteristics
Fig 1.
Transient thermal impedance from junction to mounting base as a function of pulse duration
001aab919
t
p
(s)
10
6
1
10
10
1
10
2
10
5
10
3
10
4
10
1
10
2
1
10
Z
th(j-mb)
(K/W)
10
3
δ
= t
p
T
t
T
P
tot
t
p
Table 5.
T
j
= 25
C; unless otherwise stated.
Symbol
Parameter
Characteristics are per diode
V
F
forward voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
F
= 5 A; T
j
= 150
C
I
F
= 10 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100
C
I
F
= 2 A; V
R
30 V;
dI
F
/dt = 20 A/
s;
see
Figure 9
I
F
= 1 A; V
R
30 V;
dI
F
/dt = 100 A/
s;
see
Figure 6
I
F
= 5 A; V
R
30 V;
dI
F
/dt = 50 A/
s;
T
j
= 100
C; see
Figure 7
I
F
= 1 A; dI
F
/dt = 10 A/
s
-
-
-
-
-
0.95
1.3
2
10
50
1.05
1.4
10
200
60
V
V
A
A
nC
I
R
reverse current
Q
S
reverse recovery charge
t
rr
reverse recovery time
-
50
60
ns
I
RRM
repetitive peak reverse current
-
2
3
A
V
fr
forward recovery voltage
-
2.5
-
V
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