參數(shù)資料
型號: BYQ28E-200
廠商: NXP Semiconductors N.V.
元件分類: 參考電壓二極管
英文描述: Dual ultrafast power diode
封裝: BYQ28E-200<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;BYQ28E-200/H<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<,;
文件頁數(shù): 2/10頁
文件大小: 67K
代理商: BYQ28E-200
BYQ28_SER_E_ED_4
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
2 of 10
NXP Semiconductors
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
3.
Ordering information
4.
Limiting values
Table 2.
Type number
Ordering information
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
plastic single-ended surface-mounted package (DPAK); 3-leads (one lead
cropped)
Version
SOT78
BYQ28E-200
BYQ28ED-200
DPAK
SOT428
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
RRM
repetitive peak reverse voltage
V
RWM
crest working reverse voltage
V
R
reverse voltage
I
O(AV)
average output current
Limiting values
Conditions
Min
-
-
-
-
Max
200
200
200
10
Unit
V
V
V
A
square waveform;
δ
= 1.0
square waveform;
δ
= 0.5;
T
mb
119
°
C; both diodes conducting
t
p
= 25
μ
s; square waveform;
δ
= 0.5;
T
mb
119
°
C; per diode
t = 10 ms; sinusoidal waveform; per
diode
t = 8.3 ms; sinusoidal waveform; per
diode
t
p
= 2
μ
s;
δ
= 0.001
t
p
= 100
μ
s
I
FRM
repetitive peak forward current
-
10
A
I
FSM
non-repetitive peak forward
current
-
50
A
-
55
A
I
RM
I
RSM
peak reverse recovery current
non-repetitive peak reverse
current
storage temperature
junction temperature
Electrostatic discharge
V
ESD
electrostatic discharge voltage
-
-
0.2
0.2
A
A
T
stg
T
j
40
-
+150
150
°
C
°
C
all pins; human body model;
C = 250 pF; R = 1.5 k
-
8
kV
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