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參數(shù)資料
| 型號(hào)： | BYM99 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Ultra fast low-loss controlled avalanche rectifiers(超快速低損耗控制的雪崩整流器) |
| 中文描述： | 1.8 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 53K |
| 代理商： | BYM99 |
1996 Feb 19
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYM99
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥
40
μ
m, see Fig.10.
For more information please refer to the “General Part of associated Handbook”
SYMBOL
PARAMETER
CONDITIONS
MIN.
700
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 3 A; T
j
= T
j max
; see Fig. 7
I
F
= 3 A; see Fig. 7
I
R
= 0.1 mA
1.95
3.60
V
V
V
V
(BR)R
reverse avalanche
breakdown voltage
reverse current
I
R
V
R
= V
RRMmax
;
see Fig. 8
V
R
= V
RRMmax
; T
j
= 150
°
C;
see Fig. 8
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig. 12
f = 1 MHz; V
R
= 0 V; see Fig. 9
when switched from I
F
= 1 A to
V
R
≥
30 V and dI
F
/dt =
1 A/
μ
s;
see Fig.11
5
μ
A
75
μ
A
t
rr
reverse recovery time
15
ns
C
d
dI
R
dt
diode capacitance
maximum slope of reverse
recovery current
135
pF
A/
μ
s
3
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
25
75
K/W
K/W
--------
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