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參數(shù)資料
| 型號(hào)： | BYM99 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Ultra fast low-loss controlled avalanche rectifiers(超快速低損耗控制的雪崩整流器) |
| 中文描述： | 1.8 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 53K |
| 代理商： | BYM99 |
1996 Feb 19
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYM99
FEATURES
Glass passivated
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage
continuous reverse voltage
average forward current
600
600
1.8
V
V
A
T
tp
= 50
°
C; lead length = 10 mm
see Fig. 2;
averaged over any 20 ms period;
see also Fig 6
T
amb
= 60
°
C; PCB mounting (see
Fig.10); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6
T
tp
= 50
°
C; see Fig. 4
T
amb
= 60
°
C; see Fig. 5
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
0.8
A
I
FRM
repetitive peak forward current
15
7
40
A
A
A
I
FSM
non-repetitive peak forward current
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
10
mJ
T
stg
T
j
65
65
+175
+150
°
C
°
C
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