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參數(shù)資料
| 型號(hào)： | BYM56C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Controlled avalanche rectifiers |
| 中文描述： | 1.4 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 48K |
| 代理商： | BYM56C |
1996 May 24
3
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYM56 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥
40
μ
m, see Fig.9.
For more information please refer to the “General Part of associated Handbook”
E
RSM
non-repetitive peak reverse avalanche
energy
storage temperature
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
20
mJ
T
stg
T
j
65
65
+175
°
C
°
C
junction temperature
see Fig.5
+175
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 3 A; T
j
= T
j max;
see Fig.6
I
F
= 3 A; see Fig.6
I
R
= 0.1 mA
0.95
1.15
V
V
V
(BR)R
reverse avalanche
breakdown voltage
BYM56A
BYM56B
BYM56C
BYM56D
BYM56E
reverse current
225
450
650
900
1100
V
V
V
V
V
μ
A
μ
A
I
R
V
R
= V
RRMmax
; see Fig.7
V
R
= V
RRMmax
; T
j
= 165
°
C;
see Fig.7
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.10
V
R
= 0 V; f = 1 MHz; see Fig.8
1
150
t
rr
reverse recovery time
3
μ
s
C
d
diode capacitance
90
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
25
75
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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